| PART |
Description |
Maker |
| HM624256AP-25 |
Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets
|
N/A
|
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| IC42S32200/L-6B IC42S32200/L-6BG IC42S32200/L-6BI |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Systems
ICSI
|
| IC41C82052S IC41LV82052S IC41C82052S-50J IC41C8205 |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源
ASYNCHRONOUS STATIC RAM
|
ETC
ICSI[Integrated Circuit Solution Inc]
|
| MF3257-J9CATXX MF3513-J9CATXX MF365A-J9CATXX MF312 |
STATIC RAM CARDS
ER 8C 8#12 SKT RECP
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| SST5114 SST5116 |
1K x 8 Dual-Port Static RAM
64-Kbit (8K x 8) Static RAM 晶体管|场效应| P通道| SOT - 23封装
|
Omron Electronics, LLC
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
